m ounting position: any polarity: see diagram minals: plated leads solderable per 28 31 35 42 56 70 105 140 v 0.85 0.92 40 45 50 60 80 100 150 200 v = 6a v case: it o -220ac, molded plastic mbrf640 ? mbrf6200 1 of 2 c/w pf 0.70 v 680 mbrf characteristic symbol 6.0 a sc hott ky barrier diode mbrf640 ? mbrf6200 features mec h anical data ! ! ter mil-st d- 202, method 208 ! ! ! lead free: for rohs / lead free version maximum ra t ings and electrical characteristics @t a =25c unl ess ot herwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. peak repet itive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rms revers e voltage v r(rms) average rec tified output current @t l = 100c (not e 1) i o 6. 0 a non-repeti t ive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 120 a forward vol t age @i f fm pea k reverse current @t a = 25c a t rated dc blocking voltage @t a = 100c i rm 0.1 20 ma ty pi cal junction capacitance (note 2) c j ty pi cal thermal resistance (note 1) r ja operati ng and s torage temperature range t j , t stg c note: 1. v alid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 640 mbrf 645 mbrf 650 mbrf 660 mbrf 6100 6150 units 0.80 350 280 200 3.5 3.0 z ibo seno electronic engineering co., ltd. www.senocn.com 6200 100 c l assification rating 94v-o plastic case material has ul flammability guard ring die construction for use in low voltage application low power loss, high efficiency ideally suited for automatic assembly ! schottky barrier chip ! ! ! ! ! a pin 1 3 d f e j k i t o-220ac di m min max a 14. 50 15.50 b 9. 50 10. 50 c 2. 55 2. 90 d 3. 30 4. 30 e 13. 00 14. 00 f 0. 30 0. 90 g 3. 00 ? 3.80 ? h 6. 30 7. 30 i 4. 20 4. 80 j 2. 50 2. 90 k 0.47 0.75 l 2. 50 3. 10 p 4. 88 5. 28 a l l dimensions in mm c b g p i l h p i n 1 + + p i n 3 - case mbrf mbrf mbrf -55 to +175 -55 t o +150 a l l d a t a s h e e t
2 of 2 mbrf640 ? mbrf6200 z ibo seno electronic engineering co., ltd. www.senocn.com mbrf640 ? mbrf6200 fig.1- forward current derating curve fig.4- typical instantaneous forward characteristics fig.3- typical reverse characteristics instant aneous forward current amperes instant aneous forward voltage, volts 40 10 8 6 4 2 1.0 .8 .6 .4 .2 .1 .5 .6 .7 .8 .9 1.0 1.1 1.2 50v~60v 80v~100v 150v~200v 40v~45v instant aneous reverse current ,ma percent of inst antaneous reverse voltage,(%) 120 140 10 1.0 0.1 .01 .001 0204 06080100 o t j =100 c o j t= 75 c o j t= 25 c o case tempera ture, c 10.0 8.0 4.0 0 2.0 6.0 0 20 40 60 80 100 120 140 160 180 average for ward rectified current amperes = 15 0 -2 00v fig.2- maximum non - repetitive surge current peak for w ard surge current amperes no. of cycle at 60hz 150 120 110 90 70 50 30 20 10 1 2 5 10 20 50 100 8.3ms single half since-w ave jedec method = 4 0 - 10 0v 4 0 - 6 0v 80 - 20 0 v a l l d a t a s h e e t
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